SEU Tolerance Efficiency of Multiple Layout-Hardened 28 nm DICE D Flip-Flops

Three layout-hardened Dual Interlocked Storage Cell (DICE) D Flip-Flops (DFFs) were designed and manufactured based on an advanced 28 nm planar technology. The systematic vertical tilt heavy ion irradiations demonstrated that the DICE structure contributes to radiation tolerance. However, it is hard achieve immunity from a Single Event Upset (SEU), even when ~3-µm well isolation utilized. SEU mitigation of hardened DFFs was affected by data patterns clock signals due imbalance in number upset nodes. When signal equalled 0, no error observed 181Ta irradiation, indicating are tolerant irradiation owing their reasonable sensitive volumes. divergences cross-sections enlarged our specially joint change incidences for both along-cell cross-cell ions. evaluations assist with eliminating overestimation tolerance guarantee in-orbit safety spacecraft harsh environments.